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VS-20ETF10-M3

VS-20ETF10-M3

For Reference Only

Part Number VS-20ETF10-M3
PNEDA Part # VS-20ETF10-M3
Description DIODE GEN PURP 1KV 20A TO220AC
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 4,176
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-20ETF10-M3 Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-20ETF10-M3
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
VS-20ETF10-M3, VS-20ETF10-M3 Datasheet (Total Pages: 7, Size: 212.92 KB)
PDFVS-20ETF10STRRPBF Datasheet Cover
VS-20ETF10STRRPBF Datasheet Page 2 VS-20ETF10STRRPBF Datasheet Page 3 VS-20ETF10STRRPBF Datasheet Page 4 VS-20ETF10STRRPBF Datasheet Page 5 VS-20ETF10STRRPBF Datasheet Page 6 VS-20ETF10STRRPBF Datasheet Page 7

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VS-20ETF10-M3 Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)1000V
Current - Average Rectified (Io)20A
Voltage - Forward (Vf) (Max) @ If1.3V @ 20A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)95ns
Current - Reverse Leakage @ Vr100µA @ 1000V
Capacitance @ Vr, F-
Mounting TypeThrough Hole
Package / CaseTO-220-2
Supplier Device PackageTO-220AC
Operating Temperature - Junction-40°C ~ 150°C

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