Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

UNR511600L

UNR511600L

For Reference Only

Part Number UNR511600L
PNEDA Part # UNR511600L
Description TRANS PREBIAS PNP 150MW SMINI3
Manufacturer Panasonic Electronic Components
Unit Price Request a Quote
In Stock 101,628
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

UNR511600L Resources

Brand Panasonic Electronic Components
ECAD Module ECAD
Mfr. Part NumberUNR511600L
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
UNR511600L, UNR511600L Datasheet (Total Pages: 17, Size: 586.9 KB)
PDFUNR511T00L Datasheet Cover
UNR511T00L Datasheet Page 2 UNR511T00L Datasheet Page 3 UNR511T00L Datasheet Page 4 UNR511T00L Datasheet Page 5 UNR511T00L Datasheet Page 6 UNR511T00L Datasheet Page 7 UNR511T00L Datasheet Page 8 UNR511T00L Datasheet Page 9 UNR511T00L Datasheet Page 10 UNR511T00L Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • UNR511600L Datasheet
  • where to find UNR511600L
  • Panasonic Electronic Components

  • Panasonic Electronic Components UNR511600L
  • UNR511600L PDF Datasheet
  • UNR511600L Stock

  • UNR511600L Pinout
  • Datasheet UNR511600L
  • UNR511600L Supplier

  • Panasonic Electronic Components Distributor
  • UNR511600L Price
  • UNR511600L Distributor

UNR511600L Specifications

ManufacturerPanasonic Electronic Components
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition150MHz
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSMini3-G1

The Products You May Be Interested In

DDTC115TE-7-F

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

100 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 100µA, 1mA

Current - Collector Cutoff (Max)

500nA (ICBO)

Frequency - Transition

250MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-523

Supplier Device Package

SOT-523

BCR198E6433HTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

190MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

SMMUN2114LT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

246mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3 (TO-236)

PDTC115TU,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

100 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

150mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

-

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SC-70

PBRN113ZT,215

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

40V

Resistor - Base (R1)

1 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

500 @ 300mA, 5V

Vce Saturation (Max) @ Ib, Ic

1.15V @ 8mA, 800mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

TO-236AB

Recently Sold

BSS84-7-F

BSS84-7-F

Diodes Incorporated

MOSFET P-CH 50V 130MA SOT23-3

ATMEGA32U2-AU

ATMEGA32U2-AU

Microchip Technology

IC MCU 8BIT 32KB FLASH 32TQFP

P6KE150A

P6KE150A

Taiwan Semiconductor Corporation

TVS DIODE 128V 207V DO15

ADM1087AKSZ-REEL7

ADM1087AKSZ-REEL7

Analog Devices

IC SIMPLE SEQUENCER OD SC70-6

CY37064P44-125JXC

CY37064P44-125JXC

Cypress Semiconductor

IC CPLD 64MC 10NS 44PLCC

ADM1031ARQZ

ADM1031ARQZ

ON Semiconductor

IC SENSOR 2-TEMP/FAN CTRL 16QSOP

ADM2491EBRWZ

ADM2491EBRWZ

Analog Devices

DGTL ISO 5KV RS422/RS485 16SOIC

MP24833GN-Z

MP24833GN-Z

Monolithic Power Systems Inc.

IC LED DRIVER

TAJB475K016RNJ

TAJB475K016RNJ

CAP TANT 4.7UF 10% 16V 1411

ATSAMS70N20A-CFN

ATSAMS70N20A-CFN

Microchip Technology

IC MCU 32BIT 1MB FLASH 100VFBGA

F55J25R

F55J25R

Ohmite

RES CHAS MNT 25 OHM 5% 55W

SIR424DP-T1-GE3

SIR424DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 30A PPAK SO-8