Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SMMUN2114LT1G

SMMUN2114LT1G

For Reference Only

Part Number SMMUN2114LT1G
PNEDA Part # SMMUN2114LT1G
Description TRANS PREBIAS PNP 0.246W SOT23
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 45,750
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 18 - Apr 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SMMUN2114LT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberSMMUN2114LT1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
SMMUN2114LT1G, SMMUN2114LT1G Datasheet (Total Pages: 12, Size: 178.41 KB)
PDFNSBA114YF3T5G Datasheet Cover
NSBA114YF3T5G Datasheet Page 2 NSBA114YF3T5G Datasheet Page 3 NSBA114YF3T5G Datasheet Page 4 NSBA114YF3T5G Datasheet Page 5 NSBA114YF3T5G Datasheet Page 6 NSBA114YF3T5G Datasheet Page 7 NSBA114YF3T5G Datasheet Page 8 NSBA114YF3T5G Datasheet Page 9 NSBA114YF3T5G Datasheet Page 10 NSBA114YF3T5G Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SMMUN2114LT1G Datasheet
  • where to find SMMUN2114LT1G
  • ON Semiconductor

  • ON Semiconductor SMMUN2114LT1G
  • SMMUN2114LT1G PDF Datasheet
  • SMMUN2114LT1G Stock

  • SMMUN2114LT1G Pinout
  • Datasheet SMMUN2114LT1G
  • SMMUN2114LT1G Supplier

  • ON Semiconductor Distributor
  • SMMUN2114LT1G Price
  • SMMUN2114LT1G Distributor

SMMUN2114LT1G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max246mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)

The Products You May Be Interested In

DTA123TM3T5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

260mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

SOT-723

DTA143EEBTL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SC-89, SOT-490

Supplier Device Package

EMT3F (SOT-416FL)

UNR31A100L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

80mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

35 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

80MHz

Power - Max

100mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

SSSMini3-F1

BCR185WE6327BTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

200MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

PG-SOT323-3

UNR221600L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

150MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

Mini3-G1

Recently Sold

250S130-RADR

250S130-RADR

Littelfuse

PTC RESET FUSE 60V 130MA 2SMD

G8QE-1A DC12

G8QE-1A DC12

Omron Electronics Inc-EMC Div

RELAY AUTOMOTIVE SPST 10A 12V

S-8254AAFFT-TB-G

S-8254AAFFT-TB-G

ABLIC

IC LI-ION BATT PROTECT 16-TSSOP

M25PX16-VMW6TG TR

M25PX16-VMW6TG TR

Micron Technology Inc.

IC FLASH 16M SPI 75MHZ 8SO

IRFR5305TRPBF

IRFR5305TRPBF

Infineon Technologies

MOSFET P-CH 55V 31A DPAK

ASDMB-100.000MHZ-LY-T

ASDMB-100.000MHZ-LY-T

Abracon

MEMS OSC XO 100.0000MHZ LVCMOS

IRLML6302TRPBF

IRLML6302TRPBF

Infineon Technologies

MOSFET P-CH 20V 780MA SOT-23

S25FL208K0RMFI041

S25FL208K0RMFI041

Cypress Semiconductor

IC FLASH 8M SPI 76MHZ 8SOIC

AT24RF08CN-10SC

AT24RF08CN-10SC

Microchip Technology

IC EEPROM 8K I2C 100KHZ 8SOIC

AD7403BRIZ

AD7403BRIZ

Analog Devices

IC MODULATOR 16BIT 20M 16SOIC

NRVBS3200T3G

NRVBS3200T3G

ON Semiconductor

DIODE SCHOTTKY 200V 3A SMB

IR2113STRPBF

IR2113STRPBF

Infineon Technologies

IC MOSFET DRVR HI/LO SIDE 16SOIC