TSM4ND65CI
For Reference Only
Part Number | TSM4ND65CI |
PNEDA Part # | TSM4ND65CI |
Description | 650V 4A SINGLE N-CHANNEL POWER M |
Manufacturer | Taiwan Semiconductor Corporation |
Unit Price | Request a Quote |
In Stock | 35,196 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 28 - Dec 3 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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TSM4ND65CI Resources
Brand | Taiwan Semiconductor Corporation |
ECAD Module | |
Mfr. Part Number | TSM4ND65CI |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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- Delivery date: usually 2 to 7 working days.
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TSM4ND65CI Specifications
Manufacturer | Taiwan Semiconductor Corporation |
Series | - |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.6Ohm @ 1.2A, 10V |
Vgs(th) (Max) @ Id | 3.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16.8nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 596pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 41.6W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | ITO-220 |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
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