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IPD082N10N3GBTMA1

IPD082N10N3GBTMA1

For Reference Only

Part Number IPD082N10N3GBTMA1
PNEDA Part # IPD082N10N3GBTMA1
Description MOSFET N-CH 100V 80A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,868
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD082N10N3GBTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD082N10N3GBTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPD082N10N3GBTMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs8.2mOhm @ 73A, 10V
Vgs(th) (Max) @ Id3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3980pF @ 50V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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