TRS12E65C,S1Q
For Reference Only
| Part Number | TRS12E65C,S1Q |
| PNEDA Part # | TRS12E65C-S1Q |
| Description | DIODE SCHOTTKY 650V 12A TO220-2L |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 6,516 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 25 - Nov 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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TRS12E65C Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | TRS12E65C,S1Q |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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TRS12E65C Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Current - Average Rectified (Io) | 12A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 12A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 90µA @ 170V |
| Capacitance @ Vr, F | 65pF @ 650V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2L |
| Operating Temperature - Junction | 175°C (Max) |
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Manufacturer Renesas Electronics America Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 30A Voltage - Forward (Vf) (Max) @ If 3V @ 30A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 25ns Current - Reverse Leakage @ Vr 1µA @ 600V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case SC-83 Supplier Device Package 4-LDPAK Operating Temperature - Junction -55°C ~ 150°C |
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