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ESH3BHE3_A/I

ESH3BHE3_A/I

For Reference Only

Part Number ESH3BHE3_A/I
PNEDA Part # ESH3BHE3_A-I
Description DIODE GEN PURP 100V 3A DO214AB
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 4,464
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ESH3BHE3_A/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberESH3BHE3_A/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
ESH3BHE3_A/I, ESH3BHE3_A/I Datasheet (Total Pages: 5, Size: 88.03 KB)
PDFESH3DHE3/57T Datasheet Cover
ESH3DHE3/57T Datasheet Page 2 ESH3DHE3/57T Datasheet Page 3 ESH3DHE3/57T Datasheet Page 4 ESH3DHE3/57T Datasheet Page 5

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ESH3BHE3_A/I Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If900mV @ 3A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)40ns
Current - Reverse Leakage @ Vr5µA @ 100V
Capacitance @ Vr, F70pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AB, SMC
Supplier Device PackageDO-214AB (SMC)
Operating Temperature - Junction-55°C ~ 175°C

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