TPC6109-H(TE85L,FM
For Reference Only
| Part Number | TPC6109-H(TE85L,FM |
| PNEDA Part # | TPC6109-H-TE85L-FM |
| Description | MOSFET P-CH 30V 5A VS-6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 8,604 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 28 - Dec 3 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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TPC6109-H(TE85L Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | TPC6109-H(TE85L,FM |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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TPC6109-H(TE85L Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIII-H |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 12.3nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
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