TPC6109-H(TE85L Datasheet
TPC6109-H(TE85L Datasheet
Total Pages: 7
Size: 261.75 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
TPC6109-H(TE85L,FM
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSIII-H FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 59mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs 12.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 490pF @ 10V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package VS-6 (2.9x2.8) Package / Case SOT-23-6 Thin, TSOT-23-6 |
