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TK8R2A06PL,S4X

TK8R2A06PL,S4X

For Reference Only

Part Number TK8R2A06PL,S4X
PNEDA Part # TK8R2A06PL-S4X
Description X35 PB-F POWER MOSFET TRANSISTOR
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 9,804
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK8R2A06PL Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK8R2A06PL,S4X
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TK8R2A06PL Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSIX-H
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs11.4mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs28.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1990pF @ 25V
FET Feature-
Power Dissipation (Max)36W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack

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