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FQD12N20LTM-F085

FQD12N20LTM-F085

For Reference Only

Part Number FQD12N20LTM-F085
PNEDA Part # FQD12N20LTM-F085
Description MOSFET N-CH 200V 9A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,042
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD12N20LTM-F085 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD12N20LTM-F085
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD12N20LTM-F085, FQD12N20LTM-F085 Datasheet (Total Pages: 10, Size: 1,320.43 KB)
PDFFQD12N20LTM-F085 Datasheet Cover
FQD12N20LTM-F085 Datasheet Page 2 FQD12N20LTM-F085 Datasheet Page 3 FQD12N20LTM-F085 Datasheet Page 4 FQD12N20LTM-F085 Datasheet Page 5 FQD12N20LTM-F085 Datasheet Page 6 FQD12N20LTM-F085 Datasheet Page 7 FQD12N20LTM-F085 Datasheet Page 8 FQD12N20LTM-F085 Datasheet Page 9 FQD12N20LTM-F085 Datasheet Page 10

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FQD12N20LTM-F085 Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101, QFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1080pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 55W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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