Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQD12N20LTM-F085

FQD12N20LTM-F085

For Reference Only

Part Number FQD12N20LTM-F085
PNEDA Part # FQD12N20LTM-F085
Description MOSFET N-CH 200V 9A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,042
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD12N20LTM-F085 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD12N20LTM-F085
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD12N20LTM-F085, FQD12N20LTM-F085 Datasheet (Total Pages: 10, Size: 1,320.43 KB)
PDFFQD12N20LTM-F085 Datasheet Cover
FQD12N20LTM-F085 Datasheet Page 2 FQD12N20LTM-F085 Datasheet Page 3 FQD12N20LTM-F085 Datasheet Page 4 FQD12N20LTM-F085 Datasheet Page 5 FQD12N20LTM-F085 Datasheet Page 6 FQD12N20LTM-F085 Datasheet Page 7 FQD12N20LTM-F085 Datasheet Page 8 FQD12N20LTM-F085 Datasheet Page 9 FQD12N20LTM-F085 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FQD12N20LTM-F085 Datasheet
  • where to find FQD12N20LTM-F085
  • ON Semiconductor

  • ON Semiconductor FQD12N20LTM-F085
  • FQD12N20LTM-F085 PDF Datasheet
  • FQD12N20LTM-F085 Stock

  • FQD12N20LTM-F085 Pinout
  • Datasheet FQD12N20LTM-F085
  • FQD12N20LTM-F085 Supplier

  • ON Semiconductor Distributor
  • FQD12N20LTM-F085 Price
  • FQD12N20LTM-F085 Distributor

FQD12N20LTM-F085 Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101, QFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1080pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 55W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

AO4466_102

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

23mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

448pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRLR7833CTRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

140A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

JAN2N6782

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/556

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

3.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

610mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

800mW (Ta), 15W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-39

Package / Case

TO-205AF Metal Can

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

SUP90P06-09L-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.3mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

240nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9200pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta), 250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

PI3VDP411LSRZBE

PI3VDP411LSRZBE

Diodes Incorporated

IC DEMULTIPLEXER 48TQFN

HCPL-0631-500E

HCPL-0631-500E

Broadcom

OPTOISO 3.75KV 2CH OPEN COLL 8SO

AS5145B-HSSM

AS5145B-HSSM

ams

ROTARY ENCODER MAGNETIC 1024PPR

SC2596SETRT

SC2596SETRT

Semtech

IC REG LDO DDR 1OUT 8SOIC

ADM3202ARUZ

ADM3202ARUZ

Analog Devices

IC TRANSCEIVER FULL 2/2 16TSSOP

TR2/TCP1.25-R

TR2/TCP1.25-R

Eaton - Electronics Division

FUSE BRD MNT 1.25A 250VAC 2SMD

DS2438Z+

DS2438Z+

Maxim Integrated

IC MONITOR SMART BATTERY 8-SOIC

SMBJ33CA

SMBJ33CA

Semtech

1-LINE 33V 11.3A TVS DO-214AA

SI7232DN-T1-GE3

SI7232DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 25A PPAK 1212-8

74HC573D

74HC573D

Toshiba Semiconductor and Storage

IC LATCH OCTAL D 3ST 20SOIC

ECA-2AM470

ECA-2AM470

Panasonic Electronic Components

CAP ALUM 47UF 20% 100V RADIAL

MLX90614ESF-DCI-000-TU

MLX90614ESF-DCI-000-TU

Melexis Technologies NV

SENSOR DGTL -40C-85C TO39