TK20A25D,S5Q(M
![TK20A25D,S5Q(M](http://pneda.ltd/static/products/images_mk/400/TK20A25D-S5Q-M.webp)
For Reference Only
Part Number | TK20A25D,S5Q(M |
PNEDA Part # | TK20A25D-S5Q-M |
Description | MOSFET N-CH 250V 20A TO-220SIS |
Manufacturer | Toshiba Semiconductor and Storage |
Unit Price | Request a Quote |
In Stock | 6,282 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
TK20A25D Resources
Brand | Toshiba Semiconductor and Storage |
ECAD Module |
![]() |
Mfr. Part Number | TK20A25D,S5Q(M |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
![TT](/res/v2/images/help/p-tt.gif )
![Unionpay](/res/v2/images/help/p-unionpay.gif )
![paypal](/res/v2/images/help/p-paypal.gif )
![paypalwtcreditcard](/res/v2/images/help/p-paypalwtcreditcard.gif )
![alipay](/res/v2/images/help/p-alipay.gif )
![wu](/res/v2/images/help/p-wu.gif )
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
![TNT](/res/v2/images/help/s-tnt.gif )
![UPS](/res/v2/images/help/s-ups.gif )
![Fedex](/res/v2/images/help/s-fedex.gif )
![EMS](/res/v2/images/help/s-ems.gif )
![DHL](/res/v2/images/help/s-dhl.gif )
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- TK20A25D,S5Q(M Datasheet
- where to find TK20A25D,S5Q(M
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage TK20A25D,S5Q(M
- TK20A25D,S5Q(M PDF Datasheet
- TK20A25D,S5Q(M Stock
- TK20A25D,S5Q(M Pinout
- Datasheet TK20A25D,S5Q(M
- TK20A25D,S5Q(M Supplier
- Toshiba Semiconductor and Storage Distributor
- TK20A25D,S5Q(M Price
- TK20A25D,S5Q(M Distributor
TK20A25D Specifications
Manufacturer | Toshiba Semiconductor and Storage |
Series | π-MOSVII |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 100mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2550pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |
The Products You May Be Interested In
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 20A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 2.6mOhm @ 29A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 80nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 5700pF @ 6V FET Feature - Power Dissipation (Max) 1.9W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 100mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 80Ohm @ 100mA, 10V Vgs(th) (Max) @ Id 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 54pF @ 25V FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 10.7mOhm @ 11A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V Vgs (Max) 20V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Micro Commercial Co Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer ON Semiconductor Series FRFET®, SuperFET® III FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 58A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 50mOhm @ 29A, 10V Vgs(th) (Max) @ Id 5V @ 1.7mA Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 5017pF @ 400V FET Feature - Power Dissipation (Max) 378W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |