Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RSS110N03TB

RSS110N03TB

For Reference Only

Part Number RSS110N03TB
PNEDA Part # RSS110N03TB
Description MOSFET N-CH 30V 11A 8-SOIC
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 5,994
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RSS110N03TB Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRSS110N03TB
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RSS110N03TB, RSS110N03TB Datasheet (Total Pages: 4, Size: 60.45 KB)
PDFRSS110N03FU6TB Datasheet Cover
RSS110N03FU6TB Datasheet Page 2 RSS110N03FU6TB Datasheet Page 3 RSS110N03FU6TB Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RSS110N03TB Datasheet
  • where to find RSS110N03TB
  • Rohm Semiconductor

  • Rohm Semiconductor RSS110N03TB
  • RSS110N03TB PDF Datasheet
  • RSS110N03TB Stock

  • RSS110N03TB Pinout
  • Datasheet RSS110N03TB
  • RSS110N03TB Supplier

  • Rohm Semiconductor Distributor
  • RSS110N03TB Price
  • RSS110N03TB Distributor

RSS110N03TB Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs10.7mOhm @ 11A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs17nC @ 5V
Vgs (Max)20V
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

FDWS9511L-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

NVTFS5826NLTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

7.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

24mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta), 22W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN

IXTM11P50

IXYS

Manufacturer

IXYS

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

NTF3055L175T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

175mOhm @ 1A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

270pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223 (TO-261)

Package / Case

TO-261-4, TO-261AA

TK10A80W,S4X

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

9.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

550mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id

4V @ 450µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1150pF @ 300V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

150°C

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

Recently Sold

LQH2MCN100K02L

LQH2MCN100K02L

Murata

FIXED IND 10UH 225MA 1.2 OHM SMD

TC4431EOA713

TC4431EOA713

Microchip Technology

IC MOSFET DRIVER 30V 1.5A 8-SOIC

MAX6710JUT+T

MAX6710JUT+T

Maxim Integrated

IC SUPERVISOR MPU SOT23-6

MAX9850ETI+

MAX9850ETI+

Maxim Integrated

IC AMP AUDIO .095W STER 28TQFN

BYG10D-E3/TR

BYG10D-E3/TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A

IS25CQ032-JBLE

IS25CQ032-JBLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 32M SPI 104MHZ 8SOIC

SMD050-2

SMD050-2

Littelfuse

PTC RESET FUSE 60V 500MA 2SMD

UDZVTE-177.5B

UDZVTE-177.5B

Rohm Semiconductor

DIODE ZENER 7.5V 200MW UMD2

SE5534AN

SE5534AN

ON Semiconductor

IC OPAMP GP 1 CIRCUIT 8DIP

PIC32MX340F512H-80I/PT

PIC32MX340F512H-80I/PT

Microchip Technology

IC MCU 32BIT 512KB FLASH 64TQFP

HX5008NLT

HX5008NLT

Pulse Electronics Network

TRANSFORMER MODULE GIGABIT 1PORT

DG4157DL-T1-E3

DG4157DL-T1-E3

Vishay Siliconix

IC SWITCH SGL SPDT LV SC70-6