TK1K2A60F,S4X
For Reference Only
| Part Number | TK1K2A60F,S4X |
| PNEDA Part # | TK1K2A60F-S4X |
| Description | PB-F POWER MOSFET TRANSISTOR TO- |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 20,988 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 18 - Apr 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
TK1K2A60F Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | TK1K2A60F,S4X |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- TK1K2A60F,S4X Datasheet
- where to find TK1K2A60F,S4X
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage TK1K2A60F,S4X
- TK1K2A60F,S4X PDF Datasheet
- TK1K2A60F,S4X Stock
- TK1K2A60F,S4X Pinout
- Datasheet TK1K2A60F,S4X
- TK1K2A60F,S4X Supplier
- Toshiba Semiconductor and Storage Distributor
- TK1K2A60F,S4X Price
- TK1K2A60F,S4X Distributor
TK1K2A60F Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIX |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 630µA |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 300V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Operating Temperature | 150°C |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220SIS |
| Package / Case | TO-220-3 Full Pack |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 26mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 1840pF @ 6V FET Feature - Power Dissipation (Max) 2.77W (Ta), 13W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-Micro Foot™ (1.5x1) Package / Case 6-UFBGA |
Manufacturer IXYS Series PolarP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 350mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 196nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11100pF @ 25V FET Feature - Power Dissipation (Max) 890W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 10A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 10.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 30V FET Feature - Power Dissipation (Max) 2.5W (Ta), 71.5W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 17.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.6mOhm @ 17.2A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2910pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Rohm Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 290mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 2nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 110pF @ 10V FET Feature - Power Dissipation (Max) 800mW (Ta) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package TUMT3 Package / Case 3-SMD, Flat Leads |
