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IXTN32P60P

IXTN32P60P

For Reference Only

Part Number IXTN32P60P
PNEDA Part # IXTN32P60P
Description MOSFET P-CH 600V 32A SOT227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,640
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTN32P60P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTN32P60P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTN32P60P, IXTN32P60P Datasheet (Total Pages: 5, Size: 117.26 KB)
PDFIXTN32P60P Datasheet Cover
IXTN32P60P Datasheet Page 2 IXTN32P60P Datasheet Page 3 IXTN32P60P Datasheet Page 4 IXTN32P60P Datasheet Page 5

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IXTN32P60P Specifications

ManufacturerIXYS
SeriesPolarP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs350mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs196nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11100pF @ 25V
FET Feature-
Power Dissipation (Max)890W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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