Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

TK16V60W,LVQ

TK16V60W,LVQ

For Reference Only

Part Number TK16V60W,LVQ
PNEDA Part # TK16V60W-LVQ
Description MOSFET N CH 600V 15.8A 5DFN
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 4,644
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK16V60W Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK16V60W,LVQ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • TK16V60W,LVQ Datasheet
  • where to find TK16V60W,LVQ
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage TK16V60W,LVQ
  • TK16V60W,LVQ PDF Datasheet
  • TK16V60W,LVQ Stock

  • TK16V60W,LVQ Pinout
  • Datasheet TK16V60W,LVQ
  • TK16V60W,LVQ Supplier

  • Toshiba Semiconductor and Storage Distributor
  • TK16V60W,LVQ Price
  • TK16V60W,LVQ Distributor

TK16V60W Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesDTMOSIV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1350pF @ 300V
FET FeatureSuper Junction
Power Dissipation (Max)139W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-DFN-EP (8x8)
Package / Case4-VSFN Exposed Pad

The Products You May Be Interested In

STP80NE06-10

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10000pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRF6633ATR1PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

16A (Ta), 69A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.6mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1410pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 42W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MU

Package / Case

DirectFET™ Isometric MU

FQD12N20LTM-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

280mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1080pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 55W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FQA13N80

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

12.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 6.3A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

88nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3500pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

IRF6218SPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2210pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

M24M01-RMN6P

M24M01-RMN6P

STMicroelectronics

IC EEPROM 1M I2C 1MHZ 8SO

MAX14780EESA+T

MAX14780EESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SOIC

USB2517-JZX-TR

USB2517-JZX-TR

Microchip Technology

IC USB 2.0 7PORT HUB CTLR 64QFN

NC7SV74K8X

NC7SV74K8X

ON Semiconductor

IC FF D-TYPE SNGL 1BIT US8

LTV-352T

LTV-352T

Lite-On Inc.

OPTOISO 3.75KV DARLINGTON 4SOP

STBB1-APUR

STBB1-APUR

STMicroelectronics

IC REG BCK BST ADJ 1.6A 10DFN

MMSZ5235BT1G

MMSZ5235BT1G

ON Semiconductor

DIODE ZENER 6.8V 500MW SOD123

HSMF-C155

HSMF-C155

Broadcom

LED GREEN/RED DIFFUSED CHIP SMD

FPF2123

FPF2123

ON Semiconductor

IC LOAD SWITCH FULL FUNC SOT23-5

BLM18PG121SN1D

BLM18PG121SN1D

Murata

FERRITE BEAD 120 OHM 0603 1LN

TNY290PG

TNY290PG

Power Integrations

IC OFF-LINE SWITCH PWM 8DIP

SMCJ24CAHE3/57T

SMCJ24CAHE3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 24V 38.9V DO214AB