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SUD90330E-GE3

SUD90330E-GE3

For Reference Only

Part Number SUD90330E-GE3
PNEDA Part # SUD90330E-GE3
Description MOSFET N-CH 200V 35.8A TO252AA
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,914
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUD90330E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUD90330E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUD90330E-GE3, SUD90330E-GE3 Datasheet (Total Pages: 10, Size: 209.99 KB)
PDFSUD90330E-GE3 Datasheet Cover
SUD90330E-GE3 Datasheet Page 2 SUD90330E-GE3 Datasheet Page 3 SUD90330E-GE3 Datasheet Page 4 SUD90330E-GE3 Datasheet Page 5 SUD90330E-GE3 Datasheet Page 6 SUD90330E-GE3 Datasheet Page 7 SUD90330E-GE3 Datasheet Page 8 SUD90330E-GE3 Datasheet Page 9 SUD90330E-GE3 Datasheet Page 10

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SUD90330E-GE3 Specifications

ManufacturerVishay Siliconix
SeriesThunderFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C35.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs37.5mOhm @ 12.2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1172pF @ 100V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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