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FQT1N80TF-WS

FQT1N80TF-WS

For Reference Only

Part Number FQT1N80TF-WS
PNEDA Part # FQT1N80TF-WS
Description MOSFET N-CH 800V 0.2A SOT-223
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,910
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQT1N80TF-WS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQT1N80TF-WS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQT1N80TF-WS, FQT1N80TF-WS Datasheet (Total Pages: 8, Size: 1,215.48 KB)
PDFFQT1N80TF-WS Datasheet Cover
FQT1N80TF-WS Datasheet Page 2 FQT1N80TF-WS Datasheet Page 3 FQT1N80TF-WS Datasheet Page 4 FQT1N80TF-WS Datasheet Page 5 FQT1N80TF-WS Datasheet Page 6 FQT1N80TF-WS Datasheet Page 7 FQT1N80TF-WS Datasheet Page 8

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FQT1N80TF-WS Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs20Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.2nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds195pF @ 25V
FET Feature-
Power Dissipation (Max)2.1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223-3
Package / CaseTO-261-3

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