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STY112N65M5

STY112N65M5

For Reference Only

Part Number STY112N65M5
PNEDA Part # STY112N65M5
Description MOSFET N-CH 650V 93A MAX247
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,744
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STY112N65M5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTY112N65M5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STY112N65M5, STY112N65M5 Datasheet (Total Pages: 12, Size: 851.25 KB)
PDFSTY112N65M5 Datasheet Cover
STY112N65M5 Datasheet Page 2 STY112N65M5 Datasheet Page 3 STY112N65M5 Datasheet Page 4 STY112N65M5 Datasheet Page 5 STY112N65M5 Datasheet Page 6 STY112N65M5 Datasheet Page 7 STY112N65M5 Datasheet Page 8 STY112N65M5 Datasheet Page 9 STY112N65M5 Datasheet Page 10 STY112N65M5 Datasheet Page 11

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STY112N65M5 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs22mOhm @ 47A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs350nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds16870pF @ 100V
FET Feature-
Power Dissipation (Max)625W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageMAX247™
Package / CaseTO-247-3

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