STY112N65M5 Datasheet
STY112N65M5 Datasheet
Total Pages: 12
Size: 851.25 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
STY112N65M5
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Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 96A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 22mOhm @ 47A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 350nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 16870pF @ 100V FET Feature - Power Dissipation (Max) 625W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package MAX247™ Package / Case TO-247-3 |
