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STW27N60M2-EP

STW27N60M2-EP

For Reference Only

Part Number STW27N60M2-EP
PNEDA Part # STW27N60M2-EP
Description MOSFET N-CH 600V 20A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 12,312
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW27N60M2-EP Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW27N60M2-EP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STW27N60M2-EP, STW27N60M2-EP Datasheet (Total Pages: 16, Size: 822.63 KB)
PDFSTP27N60M2-EP Datasheet Cover
STP27N60M2-EP Datasheet Page 2 STP27N60M2-EP Datasheet Page 3 STP27N60M2-EP Datasheet Page 4 STP27N60M2-EP Datasheet Page 5 STP27N60M2-EP Datasheet Page 6 STP27N60M2-EP Datasheet Page 7 STP27N60M2-EP Datasheet Page 8 STP27N60M2-EP Datasheet Page 9 STP27N60M2-EP Datasheet Page 10 STP27N60M2-EP Datasheet Page 11

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STW27N60M2-EP Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2-EP
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs163mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1320pF @ 100V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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