STU3N65M6
![STU3N65M6](http://pneda.ltd/static/products/images_mk/402/STU3N65M6.webp)
For Reference Only
Part Number | STU3N65M6 |
PNEDA Part # | STU3N65M6 |
Description | MOSFET N-CHANNEL 650V 3.5A IPAK |
Manufacturer | STMicroelectronics |
Unit Price | Request a Quote |
In Stock | 3,978 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
STU3N65M6 Resources
Brand | STMicroelectronics |
ECAD Module |
![]() |
Mfr. Part Number | STU3N65M6 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
![TT](/res/v2/images/help/p-tt.gif )
![Unionpay](/res/v2/images/help/p-unionpay.gif )
![paypal](/res/v2/images/help/p-paypal.gif )
![paypalwtcreditcard](/res/v2/images/help/p-paypalwtcreditcard.gif )
![alipay](/res/v2/images/help/p-alipay.gif )
![wu](/res/v2/images/help/p-wu.gif )
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
![TNT](/res/v2/images/help/s-tnt.gif )
![UPS](/res/v2/images/help/s-ups.gif )
![Fedex](/res/v2/images/help/s-fedex.gif )
![EMS](/res/v2/images/help/s-ems.gif )
![DHL](/res/v2/images/help/s-dhl.gif )
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- STU3N65M6 Datasheet
- where to find STU3N65M6
- STMicroelectronics
- STMicroelectronics STU3N65M6
- STU3N65M6 PDF Datasheet
- STU3N65M6 Stock
- STU3N65M6 Pinout
- Datasheet STU3N65M6
- STU3N65M6 Supplier
- STMicroelectronics Distributor
- STU3N65M6 Price
- STU3N65M6 Distributor
STU3N65M6 Specifications
Manufacturer | STMicroelectronics |
Series | MDmesh™ M6 |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.75A, 10V |
Vgs(th) (Max) @ Id | 3.75V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-PAK |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
The Products You May Be Interested In
Manufacturer Microsemi Corporation Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 77A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 41mOhm @ 44.4A, 10V Vgs(th) (Max) @ Id 3.6V @ 2.96mA Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 25V FET Feature Super Junction Power Dissipation (Max) 481W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 [B] Package / Case TO-247-3 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 45mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 540pF @ 20V FET Feature - Power Dissipation (Max) 750mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 455mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 800pF @ 50V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer STMicroelectronics Series SuperMESH5™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.6Ohm @ 2A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V Vgs (Max) 30V Input Capacitance (Ciss) (Max) @ Vds 255pF @ 100V FET Feature - Power Dissipation (Max) 85W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 290mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 27.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 25V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PF Package / Case TO-3P-3 Full Pack |