AOI7N65
For Reference Only
| Part Number | AOI7N65 |
| PNEDA Part # | AOI7N65 |
| Description | MOSFET N-CH 650V 7A TO251A |
| Manufacturer | Alpha & Omega Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,906 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 2 - Apr 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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AOI7N65 Resources
| Brand | Alpha & Omega Semiconductor |
| ECAD Module |
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| Mfr. Part Number | AOI7N65 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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AOI7N65 Specifications
| Manufacturer | Alpha & Omega Semiconductor Inc. |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.56Ohm @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 178W (Tc) |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-251A |
| Package / Case | TO-251-3 Stub Leads, IPak |
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Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id 3.9V @ 80µA Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Stub Leads, IPak |
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Manufacturer Alpha & Omega Semiconductor Inc. Series aMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 650mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9.2nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 434pF @ 100V FET Feature - Power Dissipation (Max) 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D²Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
