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STU16N60M2

STU16N60M2

For Reference Only

Part Number STU16N60M2
PNEDA Part # STU16N60M2
Description MOSFET N-CH 600V 12A IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 28,602
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STU16N60M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTU16N60M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STU16N60M2, STU16N60M2 Datasheet (Total Pages: 16, Size: 439.61 KB)
PDFSTP16N60M2 Datasheet Cover
STP16N60M2 Datasheet Page 2 STP16N60M2 Datasheet Page 3 STP16N60M2 Datasheet Page 4 STP16N60M2 Datasheet Page 5 STP16N60M2 Datasheet Page 6 STP16N60M2 Datasheet Page 7 STP16N60M2 Datasheet Page 8 STP16N60M2 Datasheet Page 9 STP16N60M2 Datasheet Page 10 STP16N60M2 Datasheet Page 11

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STU16N60M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds700pF @ 100V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageIPAK (TO-251)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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