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STS19N3LLH6

STS19N3LLH6

For Reference Only

Part Number STS19N3LLH6
PNEDA Part # STS19N3LLH6
Description MOSFET N-CH 30V 19A 8SOIC
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,456
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STS19N3LLH6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTS19N3LLH6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STS19N3LLH6, STS19N3LLH6 Datasheet (Total Pages: 14, Size: 857.89 KB)
PDFSTS19N3LLH6 Datasheet Cover
STS19N3LLH6 Datasheet Page 2 STS19N3LLH6 Datasheet Page 3 STS19N3LLH6 Datasheet Page 4 STS19N3LLH6 Datasheet Page 5 STS19N3LLH6 Datasheet Page 6 STS19N3LLH6 Datasheet Page 7 STS19N3LLH6 Datasheet Page 8 STS19N3LLH6 Datasheet Page 9 STS19N3LLH6 Datasheet Page 10 STS19N3LLH6 Datasheet Page 11

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STS19N3LLH6 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.6mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 15V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1690pF @ 25V
FET Feature-
Power Dissipation (Max)2.7W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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