STQ2LN60K3-AP Datasheet
STQ2LN60K3-AP Datasheet
Total Pages: 13
Size: 607.27 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
STQ2LN60K3-AP
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Manufacturer STMicroelectronics Series SuperMESH3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 600mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 235pF @ 50V FET Feature - Power Dissipation (Max) 2.5W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
