Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SISS10DN-T1-GE3

SISS10DN-T1-GE3

For Reference Only

Part Number SISS10DN-T1-GE3
PNEDA Part # SISS10DN-T1-GE3
Description MOSFET N-CH 40V 60A PPAK 1212-8S
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 47,232
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISS10DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISS10DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISS10DN-T1-GE3, SISS10DN-T1-GE3 Datasheet (Total Pages: 9, Size: 325.31 KB)
PDFSISS10DN-T1-GE3 Datasheet Cover
SISS10DN-T1-GE3 Datasheet Page 2 SISS10DN-T1-GE3 Datasheet Page 3 SISS10DN-T1-GE3 Datasheet Page 4 SISS10DN-T1-GE3 Datasheet Page 5 SISS10DN-T1-GE3 Datasheet Page 6 SISS10DN-T1-GE3 Datasheet Page 7 SISS10DN-T1-GE3 Datasheet Page 8 SISS10DN-T1-GE3 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SISS10DN-T1-GE3 Datasheet
  • where to find SISS10DN-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SISS10DN-T1-GE3
  • SISS10DN-T1-GE3 PDF Datasheet
  • SISS10DN-T1-GE3 Stock

  • SISS10DN-T1-GE3 Pinout
  • Datasheet SISS10DN-T1-GE3
  • SISS10DN-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SISS10DN-T1-GE3 Price
  • SISS10DN-T1-GE3 Distributor

SISS10DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs75nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds3750pF @ 20V
FET Feature-
Power Dissipation (Max)57W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S

The Products You May Be Interested In

RJK5031DPD-01#J2

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.2Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

280pF @ 25V

FET Feature

-

Power Dissipation (Max)

40.3W (Tc)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

MP-3A

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IPSA70R950CEAKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

700V

Current - Continuous Drain (Id) @ 25°C

8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

950mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

15.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

328pF @ 100V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3-347

Package / Case

TO-251-3 Stub Leads, IPak

AON6450L_001

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (5x6)

Package / Case

8-PowerSMD, Flat Leads

1HP04CH-TL-W

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

18Ohm @ 80mA, 10V

Vgs(th) (Max) @ Id

2.6V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

0.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

14pF @ 20V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-CPH

Package / Case

TO-236-3, SC-59, SOT-23-3

SIA413DJ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

29mOhm @ 6.7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

57nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.5W (Ta), 19W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6

Recently Sold

FT232RL-REEL

FT232RL-REEL

FTDI, Future Technology Devices International Ltd

IC USB FS SERIAL UART 28-SSOP

1N6283A

1N6283A

ON Semiconductor

TVS DIODE 28.2V 45.7V AXIAL

VN10LP

VN10LP

Diodes Incorporated

MOSFET N-CH 60V 270MA TO92-3

0437007.WR

0437007.WR

Littelfuse

FUSE BRD MNT 7A 32VAC 35VDC 1206

C8051F340-GQ

C8051F340-GQ

Silicon Labs

IC MCU 8BIT 64KB FLASH 48TQFP

ATF-54143-TR1G

ATF-54143-TR1G

Broadcom

FET RF 5V 2GHZ SOT-343

TL431ACLPG

TL431ACLPG

ON Semiconductor

IC VREF SHUNT ADJ TO92-3

M74HC42B1R

M74HC42B1R

STMicroelectronics

IC DECODER BCD TO DECIMAL 16-DIP

LT1963AEST-1.8#PBF

LT1963AEST-1.8#PBF

Linear Technology/Analog Devices

IC REG LINEAR 1.8V 1.5A SOT223-3

MAX809SEUR+T

MAX809SEUR+T

Maxim Integrated

IC MPU/RESET CIRC SOT23-3

74HC245D

74HC245D

Toshiba Semiconductor and Storage

IC TRANSCVR NON-INVERT 6V 20SOIC

DS3232SN#T&R

DS3232SN#T&R

Maxim Integrated

IC RTC CLK/CALENDAR I2C 20-SOIC