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STP1N105K3

STP1N105K3

For Reference Only

Part Number STP1N105K3
PNEDA Part # STP1N105K3
Description MOSFET N-CH 1050V 1.4A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 13,344
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP1N105K3 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP1N105K3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP1N105K3, STP1N105K3 Datasheet (Total Pages: 18, Size: 668.11 KB)
PDFSTFW1N105K3 Datasheet Cover
STFW1N105K3 Datasheet Page 2 STFW1N105K3 Datasheet Page 3 STFW1N105K3 Datasheet Page 4 STFW1N105K3 Datasheet Page 5 STFW1N105K3 Datasheet Page 6 STFW1N105K3 Datasheet Page 7 STFW1N105K3 Datasheet Page 8 STFW1N105K3 Datasheet Page 9 STFW1N105K3 Datasheet Page 10 STFW1N105K3 Datasheet Page 11

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STP1N105K3 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1050V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds180pF @ 100V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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