STFW1N105K3 Datasheet
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Manufacturer STMicroelectronics Series SuperMESH3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1050V Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11Ohm @ 600mA, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 180pF @ 100V FET Feature - Power Dissipation (Max) 20W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOWATT-218FX Package / Case ISOWATT218FX |
Manufacturer STMicroelectronics Series SuperMESH3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1050V Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11Ohm @ 600mA, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 180pF @ 100V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
