Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STP16NK60Z

STP16NK60Z

For Reference Only

Part Number STP16NK60Z
PNEDA Part # STP16NK60Z
Description MOSFET N-CH 600V 14A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,168
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP16NK60Z Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP16NK60Z
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP16NK60Z, STP16NK60Z Datasheet (Total Pages: 15, Size: 743.41 KB)
PDFSTF16NK60Z Datasheet Cover
STF16NK60Z Datasheet Page 2 STF16NK60Z Datasheet Page 3 STF16NK60Z Datasheet Page 4 STF16NK60Z Datasheet Page 5 STF16NK60Z Datasheet Page 6 STF16NK60Z Datasheet Page 7 STF16NK60Z Datasheet Page 8 STF16NK60Z Datasheet Page 9 STF16NK60Z Datasheet Page 10 STF16NK60Z Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STP16NK60Z Datasheet
  • where to find STP16NK60Z
  • STMicroelectronics

  • STMicroelectronics STP16NK60Z
  • STP16NK60Z PDF Datasheet
  • STP16NK60Z Stock

  • STP16NK60Z Pinout
  • Datasheet STP16NK60Z
  • STP16NK60Z Supplier

  • STMicroelectronics Distributor
  • STP16NK60Z Price
  • STP16NK60Z Distributor

STP16NK60Z Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs420mOhm @ 7A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs86nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2650pF @ 25V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

IXFR36N60P

IXYS

Manufacturer

IXYS

Series

HiPerFET™, PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

200mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

102nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5800pF @ 25V

FET Feature

-

Power Dissipation (Max)

208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

120mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

85nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4335pF @ 25V

FET Feature

-

Power Dissipation (Max)

960W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

IXTH90P10P

IXYS

Manufacturer

IXYS

Series

PolarP™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

25mOhm @ 45A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5800pF @ 25V

FET Feature

-

Power Dissipation (Max)

462W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

Manufacturer

IXYS

Series

TrenchMV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

151nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6900pF @ 25V

FET Feature

-

Power Dissipation (Max)

480W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

3.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

17.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

860pF @ 12V

FET Feature

-

Power Dissipation (Max)

107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

PCMB063T-3R3MS

PCMB063T-3R3MS

Susumu

FIXED IND 3.3UH 6A 30 MOHM SMD

BAT46WJ,115

BAT46WJ,115

Nexperia

DIODE SCHOTTKY 100V 250MA SOD323

MAX1681ESA

MAX1681ESA

Maxim Integrated

IC REG CHARGE PUMP INV 8SOIC

LM258DT

LM258DT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO

NC7WZ17P6

NC7WZ17P6

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-6

CYUSB3014-BZXC

CYUSB3014-BZXC

Cypress Semiconductor

IC ARM9 USB3 CONTROLLER 121FBGA

WSL2512R0500FEA

WSL2512R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1W 2512

CY7C68013A-56PVXI

CY7C68013A-56PVXI

Cypress Semiconductor

IC MCU USB PERIPH HI SPD 56-SSOP

PME271Y447MR30

PME271Y447MR30

KEMET

CAP FILM 4700PF 20% 1KVDC RADIAL

MBR0540T1G

MBR0540T1G

ON Semiconductor

DIODE SCHOTTKY 40V 500MA SOD123

TJA1052IT/5Y

TJA1052IT/5Y

NXP

DGTL ISOLATOR 5KV 2CH CAN 16SO

M24M01-RMN6P

M24M01-RMN6P

STMicroelectronics

IC EEPROM 1M I2C 1MHZ 8SO