Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFR36N60P

IXFR36N60P

For Reference Only

Part Number IXFR36N60P
PNEDA Part # IXFR36N60P
Description MOSFET N-CH 600V 20A ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,266
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFR36N60P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFR36N60P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFR36N60P, IXFR36N60P Datasheet (Total Pages: 4, Size: 144.21 KB)
PDFIXFR36N60P Datasheet Cover
IXFR36N60P Datasheet Page 2 IXFR36N60P Datasheet Page 3 IXFR36N60P Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFR36N60P Datasheet
  • where to find IXFR36N60P
  • IXYS

  • IXYS IXFR36N60P
  • IXFR36N60P PDF Datasheet
  • IXFR36N60P Stock

  • IXFR36N60P Pinout
  • Datasheet IXFR36N60P
  • IXFR36N60P Supplier

  • IXYS Distributor
  • IXFR36N60P Price
  • IXFR36N60P Distributor

IXFR36N60P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs200mOhm @ 18A, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs102nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds5800pF @ 25V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseISOPLUS247™

The Products You May Be Interested In

R5016FNX

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

16A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

325mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FM

Package / Case

TO-220-3 Full Pack

NTD4863N-1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

9.2A (Ta), 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.3mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13.5nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

990pF @ 12V

FET Feature

-

Power Dissipation (Max)

1.27W (Ta), 36.6W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

IRFH7191TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

FASTIRFET™, HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

15A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 48A, 10V

Vgs(th) (Max) @ Id

3.6V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1685pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (5x6)

Package / Case

8-PowerTDFN

CSD19538Q2

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

14.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

59mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

3.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

454pF @ 50V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 20.2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-WSON (2x2)

Package / Case

6-WDFN Exposed Pad

IRFS23N15DTRLP

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

90mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

ADE7754ARZRL

ADE7754ARZRL

Analog Devices

IC ENERGY METERING 3PHASE 24SOIC

KSZ9031RNXIC-TR

KSZ9031RNXIC-TR

Microchip Technology

IC TRANSCEIVER FULL 4/4 48QFN

MAX16025TE+

MAX16025TE+

Maxim Integrated

IC SUPERVISORY CIRC DL 16TQFN

2873000202

2873000202

Fair-Rite Products

FERRITE CORE MULTI-APERTURE

JAN2N2222A

JAN2N2222A

Microsemi

TRANS NPN 50V 0.8A

AD8622ARZ

AD8622ARZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

GSOT05C-E3-08

GSOT05C-E3-08

Vishay Semiconductor Diodes Division

TVS DIODE 5V 16V SOT23-3

MC78M05ABDTRKG

MC78M05ABDTRKG

ON Semiconductor

IC REG LINEAR 5V 500MA DPAK

ISL6422BERZ-T

ISL6422BERZ-T

Renesas Electronics America Inc.

IC REG CONV SATELLIT 2OUT 40QFN

MMSZ5226B-7-F

MMSZ5226B-7-F

Diodes Incorporated

DIODE ZENER 3.3V 500MW SOD123

TXH 120-112

TXH 120-112

Traco Power

AC/DC CONVERTER 12V 120W

PIC16F54-I/SO

PIC16F54-I/SO

Microchip Technology

IC MCU 8BIT 768B FLASH 18SOIC