IXFR36N60P
For Reference Only
| Part Number | IXFR36N60P |
| PNEDA Part # | IXFR36N60P |
| Description | MOSFET N-CH 600V 20A ISOPLUS247 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 4,266 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXFR36N60P Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXFR36N60P |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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IXFR36N60P Specifications
| Manufacturer | IXYS |
| Series | HiPerFET™, PolarHT™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 102nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 5800pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | ISOPLUS247™ |
| Package / Case | ISOPLUS247™ |
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Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/592 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 14A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 415mOhm @ 14A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 4W (Ta), 150W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-254AA Package / Case TO-254-3, TO-254AA (Straight Leads) |
Manufacturer Infineon Technologies Series FASTIRFET™, HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 15A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8mOhm @ 48A, 10V Vgs(th) (Max) @ Id 3.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1685pF @ 50V FET Feature - Power Dissipation (Max) 3.6W (Ta), 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PQFN (5x6) Package / Case 8-PowerTDFN |
