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STP15N60M2-EP

STP15N60M2-EP

For Reference Only

Part Number STP15N60M2-EP
PNEDA Part # STP15N60M2-EP
Description MOSFET N-CH 600V 11A EP TO220AB
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,652
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP15N60M2-EP Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP15N60M2-EP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP15N60M2-EP, STP15N60M2-EP Datasheet (Total Pages: 14, Size: 512.4 KB)
PDFSTP15N60M2-EP Datasheet Cover
STP15N60M2-EP Datasheet Page 2 STP15N60M2-EP Datasheet Page 3 STP15N60M2-EP Datasheet Page 4 STP15N60M2-EP Datasheet Page 5 STP15N60M2-EP Datasheet Page 6 STP15N60M2-EP Datasheet Page 7 STP15N60M2-EP Datasheet Page 8 STP15N60M2-EP Datasheet Page 9 STP15N60M2-EP Datasheet Page 10 STP15N60M2-EP Datasheet Page 11

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STP15N60M2-EP Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2-EP
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs378mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds590pF @ 100V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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