STP15N60M2-EP Datasheet
STP15N60M2-EP Datasheet
Total Pages: 14
Size: 512.4 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
STP15N60M2-EP
STMicroelectronics Manufacturer STMicroelectronics Series MDmesh™ M2-EP FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 378mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 590pF @ 100V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |