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STP10N65K3

STP10N65K3

For Reference Only

Part Number STP10N65K3
PNEDA Part # STP10N65K3
Description MOSFET N-CH 650V 10A TO220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 7,776
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP10N65K3 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP10N65K3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP10N65K3, STP10N65K3 Datasheet (Total Pages: 21, Size: 1,300.42 KB)
PDFSTP10N65K3 Datasheet Cover
STP10N65K3 Datasheet Page 2 STP10N65K3 Datasheet Page 3 STP10N65K3 Datasheet Page 4 STP10N65K3 Datasheet Page 5 STP10N65K3 Datasheet Page 6 STP10N65K3 Datasheet Page 7 STP10N65K3 Datasheet Page 8 STP10N65K3 Datasheet Page 9 STP10N65K3 Datasheet Page 10 STP10N65K3 Datasheet Page 11

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STP10N65K3 Specifications

ManufacturerSTMicroelectronics
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1180pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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