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STI12N65M5

STI12N65M5

For Reference Only

Part Number STI12N65M5
PNEDA Part # STI12N65M5
Description MOSFET N-CH 650V 8.5A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,322
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STI12N65M5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTI12N65M5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STI12N65M5, STI12N65M5 Datasheet (Total Pages: 23, Size: 1,086.76 KB)
PDFSTI12N65M5 Datasheet Cover
STI12N65M5 Datasheet Page 2 STI12N65M5 Datasheet Page 3 STI12N65M5 Datasheet Page 4 STI12N65M5 Datasheet Page 5 STI12N65M5 Datasheet Page 6 STI12N65M5 Datasheet Page 7 STI12N65M5 Datasheet Page 8 STI12N65M5 Datasheet Page 9 STI12N65M5 Datasheet Page 10 STI12N65M5 Datasheet Page 11

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STI12N65M5 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs430mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 100V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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