IPD90R1K2C3BTMA1
For Reference Only
| Part Number | IPD90R1K2C3BTMA1 |
| PNEDA Part # | IPD90R1K2C3BTMA1 |
| Description | MOSFET N-CH 900V 5.1A TO-252 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,904 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 5 - Apr 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPD90R1K2C3BTMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPD90R1K2C3BTMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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IPD90R1K2C3BTMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.8A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 310µA |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Infineon Technologies Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 56A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 11.2mOhm @ 35A, 10V Vgs(th) (Max) @ Id 3.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3107pF @ 25V FET Feature - Power Dissipation (Max) 99W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-PAK (TO-252AA) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 27A (Ta), 130A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 25V FET Feature - Power Dissipation (Max) 3.1W (Ta), 69W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
