Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STH52N10LF3-2AG

STH52N10LF3-2AG

For Reference Only

Part Number STH52N10LF3-2AG
PNEDA Part # STH52N10LF3-2AG
Description MOSFET N-CH 100V 52A H2PAK-2
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,762
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STH52N10LF3-2AG Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTH52N10LF3-2AG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STH52N10LF3-2AG Datasheet
  • where to find STH52N10LF3-2AG
  • STMicroelectronics

  • STMicroelectronics STH52N10LF3-2AG
  • STH52N10LF3-2AG PDF Datasheet
  • STH52N10LF3-2AG Stock

  • STH52N10LF3-2AG Pinout
  • Datasheet STH52N10LF3-2AG
  • STH52N10LF3-2AG Supplier

  • STMicroelectronics Distributor
  • STH52N10LF3-2AG Price
  • STH52N10LF3-2AG Distributor

STH52N10LF3-2AG Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ F3
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs20mOhm @ 26A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18.5nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 400V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

SI7462DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

130mOhm @ 4.1A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.9W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

RJK2555DPA-WS#J0

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

17A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

104mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

8-WPAK

Package / Case

8-PowerWDFN

IPB067N08N3GATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

6.7mOhm @ 73A, 10V

Vgs(th) (Max) @ Id

3.5V @ 73µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3840pF @ 40V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPP77N06S212AKSA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

77A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12mOhm @ 38A, 10V

Vgs(th) (Max) @ Id

4V @ 93µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1770pF @ 25V

FET Feature

-

Power Dissipation (Max)

158W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

IRF630FP

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MESH OVERLAY™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 25V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

Recently Sold

M74HC42B1R

M74HC42B1R

STMicroelectronics

IC DECODER BCD TO DECIMAL 16-DIP

MAX809SEUR+T

MAX809SEUR+T

Maxim Integrated

IC MPU/RESET CIRC SOT23-3

KSZ8081RNBIA-TR

KSZ8081RNBIA-TR

Microchip Technology

IC TRANSCEIVER FULL 1/1 32QFN

VLMRGB343-ST-UV-RS

VLMRGB343-ST-UV-RS

Vishay Semiconductor Opto Division

LED RGB 4PLCC SMD

PLA10AN3630R3D2B

PLA10AN3630R3D2B

Murata

COMMON MODE CHOKE 300MA 2LN TH

AT25256B-SSHL-T

AT25256B-SSHL-T

Microchip Technology

IC EEPROM 256K SPI 20MHZ 8SOIC

M4A5-32/32-10JNC

M4A5-32/32-10JNC

Lattice Semiconductor Corporation

IC CPLD 32MC 10NS 44PLCC

MX25L12835FM2I-10G

MX25L12835FM2I-10G

Macronix

IC FLASH 128M SPI 104MHZ 8SOP

ADN4662BRZ

ADN4662BRZ

Analog Devices

IC RECEIVER 0/1 8SOIC

CDSOT23-T24CAN

CDSOT23-T24CAN

Bourns

TVS DIODE 24V 40V SOT23

MAX1111CPE+

MAX1111CPE+

Maxim Integrated

IC ADC 8BIT SAR 16DIP

EPM1270F256C5N

EPM1270F256C5N

Intel

IC CPLD 980MC 6.2NS 256FBGA