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STH160N4LF6-2

STH160N4LF6-2

For Reference Only

Part Number STH160N4LF6-2
PNEDA Part # STH160N4LF6-2
Description MOSFET N-CH 40V 120A H2PAK-2
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,946
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STH160N4LF6-2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTH160N4LF6-2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STH160N4LF6-2, STH160N4LF6-2 Datasheet (Total Pages: 17, Size: 1,024.9 KB)
PDFSTH160N4LF6-2 Datasheet Cover
STH160N4LF6-2 Datasheet Page 2 STH160N4LF6-2 Datasheet Page 3 STH160N4LF6-2 Datasheet Page 4 STH160N4LF6-2 Datasheet Page 5 STH160N4LF6-2 Datasheet Page 6 STH160N4LF6-2 Datasheet Page 7 STH160N4LF6-2 Datasheet Page 8 STH160N4LF6-2 Datasheet Page 9 STH160N4LF6-2 Datasheet Page 10 STH160N4LF6-2 Datasheet Page 11

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STH160N4LF6-2 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs2.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs181nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8130pF @ 20V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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