BTS282ZE3180AATMA2
For Reference Only
| Part Number | BTS282ZE3180AATMA2 |
| PNEDA Part # | BTS282ZE3180AATMA2 |
| Description | MOSFET N-CH 49V 80A TO-220-7 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 12,024 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BTS282ZE3180AATMA2 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BTS282ZE3180AATMA2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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BTS282ZE3180AATMA2 Specifications
| Manufacturer | Infineon Technologies |
| Series | TEMPFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 49V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 36A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 240µA |
| Gate Charge (Qg) (Max) @ Vgs | 232nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800pF @ 25V |
| FET Feature | Temperature Sensing Diode |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7-1 |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Manufacturer Infineon Technologies Series OptimWatt™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 88A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10.7mOhm @ 88A, 10V Vgs(th) (Max) @ Id 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |
