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STGB8NC60KT4

STGB8NC60KT4

For Reference Only

Part Number STGB8NC60KT4
PNEDA Part # STGB8NC60KT4
Description IGBT 600V 15A 65W D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 19,032
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGB8NC60KT4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGB8NC60KT4
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGB8NC60KT4, STGB8NC60KT4 Datasheet (Total Pages: 17, Size: 453.4 KB)
PDFSTGD8NC60KT4 Datasheet Cover
STGD8NC60KT4 Datasheet Page 2 STGD8NC60KT4 Datasheet Page 3 STGD8NC60KT4 Datasheet Page 4 STGD8NC60KT4 Datasheet Page 5 STGD8NC60KT4 Datasheet Page 6 STGD8NC60KT4 Datasheet Page 7 STGD8NC60KT4 Datasheet Page 8 STGD8NC60KT4 Datasheet Page 9 STGD8NC60KT4 Datasheet Page 10 STGD8NC60KT4 Datasheet Page 11

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STGB8NC60KT4 Specifications

ManufacturerSTMicroelectronics
SeriesPowerMESH™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)15A
Current - Collector Pulsed (Icm)30A
Vce(on) (Max) @ Vge, Ic2.75V @ 15V, 3A
Power - Max65W
Switching Energy55µJ (on), 85µJ (off)
Input TypeStandard
Gate Charge19nC
Td (on/off) @ 25°C17ns/72ns
Test Condition390V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

195A

Vce(on) (Max) @ Vge, Ic

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Power - Max

300W

Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Mounting Type

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Package / Case

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AUIRGPS4067D1

Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Manufacturer

IXYS

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

50A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

200W

Switching Energy

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Input Type

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130nC

Td (on/off) @ 25°C

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Test Condition

960V, 25A, 33Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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ON Semiconductor

Manufacturer

ON Semiconductor

Series

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IGBT Type

Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 40A

Power - Max

115W

Switching Energy

870µJ (on), 260µJ (off)

Input Type

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Gate Charge

119nC

Td (on/off) @ 25°C

12ns/92ns

Test Condition

400V, 40A, 6Ohm, 15V

Reverse Recovery Time (trr)

36ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3 Full Pack

Supplier Device Package

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