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FGAF40N60SMD

FGAF40N60SMD

For Reference Only

Part Number FGAF40N60SMD
PNEDA Part # FGAF40N60SMD
Description IGBT 600V 80A 79W TO-3PF
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,886
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGAF40N60SMD Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGAF40N60SMD
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
FGAF40N60SMD, FGAF40N60SMD Datasheet (Total Pages: 11, Size: 508.37 KB)
PDFFGAF40N60SMD Datasheet Cover
FGAF40N60SMD Datasheet Page 2 FGAF40N60SMD Datasheet Page 3 FGAF40N60SMD Datasheet Page 4 FGAF40N60SMD Datasheet Page 5 FGAF40N60SMD Datasheet Page 6 FGAF40N60SMD Datasheet Page 7 FGAF40N60SMD Datasheet Page 8 FGAF40N60SMD Datasheet Page 9 FGAF40N60SMD Datasheet Page 10 FGAF40N60SMD Datasheet Page 11

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FGAF40N60SMD Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeField Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 40A
Power - Max115W
Switching Energy870µJ (on), 260µJ (off)
Input TypeStandard
Gate Charge119nC
Td (on/off) @ 25°C12ns/92ns
Test Condition400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr)36ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3 Full Pack
Supplier Device PackageTO-3PF

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Test Condition

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Supplier Device Package

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Manufacturer

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Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

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Power - Max

100W

Switching Energy

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Input Type

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Gate Charge

77nC

Td (on/off) @ 25°C

15ns/65ns

Test Condition

300V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

95ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3 Full Pack

Supplier Device Package

TO-3PF

APT50GT120B2RG

Microsemi

Manufacturer

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Series

Thunderbolt IGBT®

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

94A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

3.7V @ 15V, 50A

Power - Max

625W

Switching Energy

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Input Type

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Gate Charge

340nC

Td (on/off) @ 25°C

24ns/230ns

Test Condition

800V, 50A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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