Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STB24N60M2

STB24N60M2

For Reference Only

Part Number STB24N60M2
PNEDA Part # STB24N60M2
Description MOSFET N-CH 600V 18A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,210
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB24N60M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB24N60M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB24N60M2, STB24N60M2 Datasheet (Total Pages: 21, Size: 1,556.76 KB)
PDFSTW24N60M2 Datasheet Cover
STW24N60M2 Datasheet Page 2 STW24N60M2 Datasheet Page 3 STW24N60M2 Datasheet Page 4 STW24N60M2 Datasheet Page 5 STW24N60M2 Datasheet Page 6 STW24N60M2 Datasheet Page 7 STW24N60M2 Datasheet Page 8 STW24N60M2 Datasheet Page 9 STW24N60M2 Datasheet Page 10 STW24N60M2 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STB24N60M2 Datasheet
  • where to find STB24N60M2
  • STMicroelectronics

  • STMicroelectronics STB24N60M2
  • STB24N60M2 PDF Datasheet
  • STB24N60M2 Stock

  • STB24N60M2 Pinout
  • Datasheet STB24N60M2
  • STB24N60M2 Supplier

  • STMicroelectronics Distributor
  • STB24N60M2 Price
  • STB24N60M2 Distributor

STB24N60M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II Plus
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1060pF @ 100V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

CPH6350-TL-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

43mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

600pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

6-CPH

Package / Case

SOT-23-6 Thin, TSOT-23-6

NTMFS4852NT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16A (Ta), 155A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.1mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

71.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4970pF @ 12V

FET Feature

-

Power Dissipation (Max)

900mW (Ta), 86.2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

Manufacturer

IXYS

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

SCT3120ALHRC11

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Rds On (Max) @ Id, Vgs

156mOhm @ 6.7A, 18V

Vgs(th) (Max) @ Id

5.6V @ 3.33mA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 18V

Vgs (Max)

+22V, -4V

Input Capacitance (Ciss) (Max) @ Vds

460pF @ 500V

FET Feature

-

Power Dissipation (Max)

103W

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247N

Package / Case

TO-247-3

Manufacturer

IXYS

Series

HiPerFET™, TrenchT2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

76A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 38A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

97nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5800pF @ 25V

FET Feature

-

Power Dissipation (Max)

350W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AA

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

SR1LARU

SR1LARU

STMicroelectronics

IC SMART RESET 4PIN 6.0S 6UDFN

MMSZ5250BT1G

MMSZ5250BT1G

ON Semiconductor

DIODE ZENER 20V 500MW SOD123

LM7824ACT

LM7824ACT

ON Semiconductor

IC REG LINEAR 24V 1A TO220-3

ATMEGA162-16PU

ATMEGA162-16PU

Microchip Technology

IC MCU 8BIT 16KB FLASH 40DIP

KSZ9031RNXIC

KSZ9031RNXIC

Microchip Technology

IC TRANSCEIVER FULL 4/4 48QFN

PIC12F629-I/SN

PIC12F629-I/SN

Microchip Technology

IC MCU 8BIT 1.75KB FLASH 8SOIC

AT25M01-SSHM-T

AT25M01-SSHM-T

Microchip Technology

IC EEPROM 1M SPI 20MHZ 8SOIC

VNQ600

VNQ600

STMicroelectronics

RELAY SSR 4-CH HI-SIDE 28-SOIC

ZVP4424GTA

ZVP4424GTA

Diodes Incorporated

MOSFET P-CH 240V 0.48A SOT223

KA7810AETU

KA7810AETU

ON Semiconductor

IC REG LINEAR 10V 1A TO220-3

BLM15AG221SN1D

BLM15AG221SN1D

Murata

FERRITE BEAD 220 OHM 0402 1LN

TAJE107M025RNJ

TAJE107M025RNJ

CAP TANT 100UF 20% 25V 2917