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SIHU3N50D-E3

SIHU3N50D-E3

For Reference Only

Part Number SIHU3N50D-E3
PNEDA Part # SIHU3N50D-E3
Description MOSFET N-CH 500V 3A TO251 IPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,708
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHU3N50D-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHU3N50D-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHU3N50D-E3, SIHU3N50D-E3 Datasheet (Total Pages: 8, Size: 182.14 KB)
PDFSIHU3N50D-E3 Datasheet Cover
SIHU3N50D-E3 Datasheet Page 2 SIHU3N50D-E3 Datasheet Page 3 SIHU3N50D-E3 Datasheet Page 4 SIHU3N50D-E3 Datasheet Page 5 SIHU3N50D-E3 Datasheet Page 6 SIHU3N50D-E3 Datasheet Page 7 SIHU3N50D-E3 Datasheet Page 8

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SIHU3N50D-E3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds175pF @ 100V
FET Feature-
Power Dissipation (Max)69W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251AA
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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