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STB16NK65Z-S

STB16NK65Z-S

For Reference Only

Part Number STB16NK65Z-S
PNEDA Part # STB16NK65Z-S
Description MOSFET N-CH 650V 13A I2SPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,316
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB16NK65Z-S Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB16NK65Z-S
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB16NK65Z-S, STB16NK65Z-S Datasheet (Total Pages: 12, Size: 338.92 KB)
PDFSTB16NK65Z-S Datasheet Cover
STB16NK65Z-S Datasheet Page 2 STB16NK65Z-S Datasheet Page 3 STB16NK65Z-S Datasheet Page 4 STB16NK65Z-S Datasheet Page 5 STB16NK65Z-S Datasheet Page 6 STB16NK65Z-S Datasheet Page 7 STB16NK65Z-S Datasheet Page 8 STB16NK65Z-S Datasheet Page 9 STB16NK65Z-S Datasheet Page 10 STB16NK65Z-S Datasheet Page 11

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STB16NK65Z-S Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs500mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs89nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2750pF @ 25V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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