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SSM6J216FE,LF

SSM6J216FE,LF

For Reference Only

Part Number SSM6J216FE,LF
PNEDA Part # SSM6J216FE-LF
Description MOSFET P-CHANNEL 12V 4.8A ES6
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 34,770
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SSM6J216FE Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberSSM6J216FE,LF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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SSM6J216FE Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVI
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs32mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs12.7nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1040pF @ 12V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device PackageES6
Package / CaseSOT-563, SOT-666

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