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SIHG039N60EF-GE3

SIHG039N60EF-GE3

For Reference Only

Part Number SIHG039N60EF-GE3
PNEDA Part # SIHG039N60EF-GE3
Description MOSFET N-CH 600V 61A TO-247AC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,436
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHG039N60EF-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHG039N60EF-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHG039N60EF-GE3, SIHG039N60EF-GE3 Datasheet (Total Pages: 9, Size: 180.18 KB)
PDFSIHG039N60EF-GE3 Datasheet Cover
SIHG039N60EF-GE3 Datasheet Page 2 SIHG039N60EF-GE3 Datasheet Page 3 SIHG039N60EF-GE3 Datasheet Page 4 SIHG039N60EF-GE3 Datasheet Page 5 SIHG039N60EF-GE3 Datasheet Page 6 SIHG039N60EF-GE3 Datasheet Page 7 SIHG039N60EF-GE3 Datasheet Page 8 SIHG039N60EF-GE3 Datasheet Page 9

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SIHG039N60EF-GE3 Specifications

ManufacturerVishay Siliconix
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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TO-262-3 Long Leads, I²Pak, TO-262AA

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