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SQR70090ELR_GE3

SQR70090ELR_GE3

For Reference Only

Part Number SQR70090ELR_GE3
PNEDA Part # SQR70090ELR_GE3
Description MOSFET N-CHANNEL 100V 86A DPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 14,706
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQR70090ELR_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQR70090ELR_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQR70090ELR_GE3, SQR70090ELR_GE3 Datasheet (Total Pages: 7, Size: 236.06 KB)
PDFSQR70090ELR_GE3 Datasheet Cover
SQR70090ELR_GE3 Datasheet Page 2 SQR70090ELR_GE3 Datasheet Page 3 SQR70090ELR_GE3 Datasheet Page 4 SQR70090ELR_GE3 Datasheet Page 5 SQR70090ELR_GE3 Datasheet Page 6 SQR70090ELR_GE3 Datasheet Page 7

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SQR70090ELR_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C86A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3500pF @ 25V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252)
Package / CaseTO-252-4, DPak (3 Leads + Tab)

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