Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQR70090ELR_GE3

SQR70090ELR_GE3

For Reference Only

Part Number SQR70090ELR_GE3
PNEDA Part # SQR70090ELR_GE3
Description MOSFET N-CHANNEL 100V 86A DPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 14,706
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQR70090ELR_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQR70090ELR_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQR70090ELR_GE3, SQR70090ELR_GE3 Datasheet (Total Pages: 7, Size: 236.06 KB)
PDFSQR70090ELR_GE3 Datasheet Cover
SQR70090ELR_GE3 Datasheet Page 2 SQR70090ELR_GE3 Datasheet Page 3 SQR70090ELR_GE3 Datasheet Page 4 SQR70090ELR_GE3 Datasheet Page 5 SQR70090ELR_GE3 Datasheet Page 6 SQR70090ELR_GE3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SQR70090ELR_GE3 Datasheet
  • where to find SQR70090ELR_GE3
  • Vishay Siliconix

  • Vishay Siliconix SQR70090ELR_GE3
  • SQR70090ELR_GE3 PDF Datasheet
  • SQR70090ELR_GE3 Stock

  • SQR70090ELR_GE3 Pinout
  • Datasheet SQR70090ELR_GE3
  • SQR70090ELR_GE3 Supplier

  • Vishay Siliconix Distributor
  • SQR70090ELR_GE3 Price
  • SQR70090ELR_GE3 Distributor

SQR70090ELR_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C86A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3500pF @ 25V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252)
Package / CaseTO-252-4, DPak (3 Leads + Tab)

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

6.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

67nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3150pF @ 25V

FET Feature

-

Power Dissipation (Max)

690W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

IPB60R385CPATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

385mOhm @ 5.2A, 10V

Vgs(th) (Max) @ Id

3.5V @ 340µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

790pF @ 100V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SSM6J51TUTE85LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIV

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 2.5V

Rds On (Max) @ Id, Vgs

54mOhm @ 2A, 2.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

UF6

Package / Case

6-SMD, Flat Leads

IPI120N06S4H1AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

270nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

21900pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IPW60R040CFD7XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 24.9A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1.25mA

Gate Charge (Qg) (Max) @ Vgs

109nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4354pF @ 400V

FET Feature

-

Power Dissipation (Max)

227W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3

Recently Sold

HCTL-1101-PLC

HCTL-1101-PLC

Broadcom

IC MOTOR DRIVER BIPOLAR 44PLCC

914CE2-3

914CE2-3

Honeywell Sensing and Productivity Solutions

SWITCH SNAP ACTION SPDT 5A 240V

MCP1826-3302E/ET

MCP1826-3302E/ET

Microchip Technology

IC REG LINEAR 3.3V 1A 5DDPAK

NJM2120D

NJM2120D

NJR Corporation/NJRC

IC OPAMP GP 2 CIRCUIT 8DIP

DG641DY

DG641DY

Vishay Siliconix

IC VIDEO SWITCH SPST 16SOIC

9ZXL0831EKILF

9ZXL0831EKILF

IDT, Integrated Device Technology

DB800ZL

MAX3051ESA+T

MAX3051ESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SO

ADP1613ARMZ-R7

ADP1613ARMZ-R7

Analog Devices

IC REG BST SEPIC ADJ 2A 8MSOP

RCLAMP0502N.TCT

RCLAMP0502N.TCT

Semtech

TVS DIODE 6.5V 30V SLP1210N6

ST1S40IPUR

ST1S40IPUR

STMicroelectronics

IC REG BUCK ADJ 3A 8VFQFPN

EP3C16F484I7N

EP3C16F484I7N

Intel

IC FPGA 346 I/O 484FBGA

SI3420A-TP

SI3420A-TP

Micro Commercial Co

MOSFET N-CH 20V 6A SOT-23