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IXFH70N20Q3

IXFH70N20Q3

For Reference Only

Part Number IXFH70N20Q3
PNEDA Part # IXFH70N20Q3
Description MOSFET N-CH 200V 70A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,180
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH70N20Q3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH70N20Q3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH70N20Q3, IXFH70N20Q3 Datasheet (Total Pages: 5, Size: 135.02 KB)
PDFIXFT70N20Q3 Datasheet Cover
IXFT70N20Q3 Datasheet Page 2 IXFT70N20Q3 Datasheet Page 3 IXFT70N20Q3 Datasheet Page 4 IXFT70N20Q3 Datasheet Page 5

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IXFH70N20Q3 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs40mOhm @ 35A, 10V
Vgs(th) (Max) @ Id6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs67nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3150pF @ 25V
FET Feature-
Power Dissipation (Max)690W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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