Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQP50N06-09L_GE3

SQP50N06-09L_GE3

For Reference Only

Part Number SQP50N06-09L_GE3
PNEDA Part # SQP50N06-09L_GE3
Description MOSFET N-CH 60V 50A TO220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,256
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQP50N06-09L_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQP50N06-09L_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQP50N06-09L_GE3, SQP50N06-09L_GE3 Datasheet (Total Pages: 8, Size: 130.16 KB)
PDFSQP50N06-09L_GE3 Datasheet Cover
SQP50N06-09L_GE3 Datasheet Page 2 SQP50N06-09L_GE3 Datasheet Page 3 SQP50N06-09L_GE3 Datasheet Page 4 SQP50N06-09L_GE3 Datasheet Page 5 SQP50N06-09L_GE3 Datasheet Page 6 SQP50N06-09L_GE3 Datasheet Page 7 SQP50N06-09L_GE3 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SQP50N06-09L_GE3 Datasheet
  • where to find SQP50N06-09L_GE3
  • Vishay Siliconix

  • Vishay Siliconix SQP50N06-09L_GE3
  • SQP50N06-09L_GE3 PDF Datasheet
  • SQP50N06-09L_GE3 Stock

  • SQP50N06-09L_GE3 Pinout
  • Datasheet SQP50N06-09L_GE3
  • SQP50N06-09L_GE3 Supplier

  • Vishay Siliconix Distributor
  • SQP50N06-09L_GE3 Price
  • SQP50N06-09L_GE3 Distributor

SQP50N06-09L_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3065pF @ 25V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

IPI90R500C3XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id

3.5V @ 740µA

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 100V

FET Feature

-

Power Dissipation (Max)

156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Manufacturer

IXYS

Series

GigaMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

310A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

715nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

47500pF @ 25V

FET Feature

-

Power Dissipation (Max)

1070W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

TK50E10K3(S1SS-Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

-

2SK2963(TE12L,F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

700mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PW-MINI

Package / Case

TO-243AA

SPI20N65C3XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

20.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 13.1A, 10V

Vgs(th) (Max) @ Id

3.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

114nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

FET Feature

-

Power Dissipation (Max)

208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

JS202011JAQN

JS202011JAQN

C&K

SWITCH SLIDE DPDT 300MA 6V

ILBB0805ER110V

ILBB0805ER110V

Vishay Dale

FERRITE BEAD 11 OHM 0805 1LN

IRLML6401TRPBF

IRLML6401TRPBF

Infineon Technologies

MOSFET P-CH 12V 4.3A SOT-23

XC3SD3400A-4CSG484LI

XC3SD3400A-4CSG484LI

Xilinx

IC FPGA 309 I/O 484CSBGA

MAX11207EEE+T

MAX11207EEE+T

Maxim Integrated

IC ADC 20BIT SIGMA-DELTA 16QSOP

ESD9L5.0ST5G

ESD9L5.0ST5G

ON Semiconductor

TVS DIODE 5V 9.8V SOD923

DS2401P+T&R

DS2401P+T&R

Maxim Integrated

IC SILICON SERIAL NUMBER 6TSOC

SRN8040-R50Y

SRN8040-R50Y

Bourns

FIXED IND 500NH 10A 7 MOHM SMD

MSS1P4-M3/89A

MSS1P4-M3/89A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A MICROSMP

T491C107K016AT

T491C107K016AT

KEMET

CAP TANT 100UF 10% 16V 2312

NC7SP125P5X

NC7SP125P5X

ON Semiconductor

IC BUF NON-INVERT 3.6V SC70-5

4610X-101-332LF

4610X-101-332LF

Bourns

RES ARRAY 9 RES 3.3K OHM 10SIP