Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQP50N06-09L_GE3

SQP50N06-09L_GE3

For Reference Only

Part Number SQP50N06-09L_GE3
PNEDA Part # SQP50N06-09L_GE3
Description MOSFET N-CH 60V 50A TO220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,256
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQP50N06-09L_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQP50N06-09L_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQP50N06-09L_GE3, SQP50N06-09L_GE3 Datasheet (Total Pages: 8, Size: 130.16 KB)
PDFSQP50N06-09L_GE3 Datasheet Cover
SQP50N06-09L_GE3 Datasheet Page 2 SQP50N06-09L_GE3 Datasheet Page 3 SQP50N06-09L_GE3 Datasheet Page 4 SQP50N06-09L_GE3 Datasheet Page 5 SQP50N06-09L_GE3 Datasheet Page 6 SQP50N06-09L_GE3 Datasheet Page 7 SQP50N06-09L_GE3 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SQP50N06-09L_GE3 Datasheet
  • where to find SQP50N06-09L_GE3
  • Vishay Siliconix

  • Vishay Siliconix SQP50N06-09L_GE3
  • SQP50N06-09L_GE3 PDF Datasheet
  • SQP50N06-09L_GE3 Stock

  • SQP50N06-09L_GE3 Pinout
  • Datasheet SQP50N06-09L_GE3
  • SQP50N06-09L_GE3 Supplier

  • Vishay Siliconix Distributor
  • SQP50N06-09L_GE3 Price
  • SQP50N06-09L_GE3 Distributor

SQP50N06-09L_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3065pF @ 25V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

STW7N90K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ K5

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

SPI20N65C3XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

20.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 13.1A, 10V

Vgs(th) (Max) @ Id

3.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

114nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

FET Feature

-

Power Dissipation (Max)

208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

2SK2963(TE12L,F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

700mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PW-MINI

Package / Case

TO-243AA

IRLU2703

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

45mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 25V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

TK50E10K3(S1SS-Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

-

Recently Sold

HX5008NL

HX5008NL

Pulse Electronics Network

MODULE SINGLE GIGABIT LAN 24SOIC

3362W-1-103

3362W-1-103

Bourns

TRIMMER 10K OHM 0.5W PC PIN SIDE

LTC4365ITS8#TRMPBF

LTC4365ITS8#TRMPBF

Linear Technology/Analog Devices

IC OVERVOLTAGE PROT TSOT23-8

NTR4171PT1G

NTR4171PT1G

ON Semiconductor

MOSFET P-CH 30V 2.2A SOT23

ZXM61P02FTA

ZXM61P02FTA

Diodes Incorporated

MOSFET P-CH 20V 0.9A SOT23-3

MAX3051ESA+T

MAX3051ESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SO

PI6C49X0204CWIE

PI6C49X0204CWIE

Diodes Incorporated

IC CLOCK BUFFER 1:4 200MHZ 8SOIC

CD143A-SR70

CD143A-SR70

Bourns

TVS DIODE 7V SOT143

RCLAMP3654P.TCT

RCLAMP3654P.TCT

Semtech

TVS DIODE 5.5V 30V SLP1616P6

ADP122AUJZ-3.3-R7

ADP122AUJZ-3.3-R7

Analog Devices

IC REG LINEAR 3.3V 300MA TSOT5

SP3010-04UTG

SP3010-04UTG

Littelfuse

TVS DIODE 6V 12.3V 10UDFN

NJM2120D

NJM2120D

NJR Corporation/NJRC

IC OPAMP GP 2 CIRCUIT 8DIP