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IXFN360N15T2

IXFN360N15T2

For Reference Only

Part Number IXFN360N15T2
PNEDA Part # IXFN360N15T2
Description MOSFET N-CH 150V 310A SOT227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 17,784
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN360N15T2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN360N15T2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN360N15T2, IXFN360N15T2 Datasheet (Total Pages: 6, Size: 178.36 KB)
PDFIXFN360N15T2 Datasheet Cover
IXFN360N15T2 Datasheet Page 2 IXFN360N15T2 Datasheet Page 3 IXFN360N15T2 Datasheet Page 4 IXFN360N15T2 Datasheet Page 5 IXFN360N15T2 Datasheet Page 6

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IXFN360N15T2 Specifications

ManufacturerIXYS
SeriesGigaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C310A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs715nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds47500pF @ 25V
FET Feature-
Power Dissipation (Max)1070W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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